Sensitive asymmetrical MI effect in crossed anisotropy sputtered films

被引:10
作者
Ueno, K [1 ]
Hiramoto, H
Mohri, K
Uchiyama, T
Panina, LV
机构
[1] Stanley Elect Co R&D, Yokohama, Kanagawa 225, Japan
[2] Nagoya Univ, Dept Elect Engn, Nagoya, Aichi 4648603, Japan
[3] Moscow Phys & Engn Univ, Moscow, Russia
关键词
crossed anisotropy; MI effect; sputtered films;
D O I
10.1109/20.908857
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports experimental results to obtain a sensitive and asymmetrical MI effect in crossed anisotropy sputtered films magnetized with a de-biased ac or pulse current. The sensitive and asymmetrical MI effect occurs, because the crossed anisotropy films induce spiral magnetic anisotropy, The crossed anisotropy film (Co72Fe8B20) was made on a glass substrate using de sputtering with two layers having 4.5 mum thickness each applying a de field of 21 kA/m along with a designed anisotropy direction. A linear MI characteristic with a field detection sensitivity of 0.15 %/(Nm) (12 %/Oe) was obtained, which realizes a sensitive linear field sensor without any dr bias field.
引用
收藏
页码:3448 / 3450
页数:3
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