Design of W-band SiGe BiCMOS Low Noise Amplifier

被引：0
|
作者：
Xu Yulong [1 ]
Huang Wen [1 ]
Li Zhuang [2 ]
Wang Jinhong [3 ]
Cao Rui [2 ]
Sang Lei [1 ]
机构：
[1] Hefei Univ Technol, Hefei, Anhui, Peoples R China
[2] CETC, Res Inst 38, Hefei, Anhui, Peoples R China
[3] Northwestern Polytech Univ, Xian, Shaanxi, Peoples R China
来源：
2019 12TH GLOBAL SYMPOSIUM ON MILLIMETER WAVES (GSMM 2019) | 2019年
关键词：
low noise amplifier; optimal noise matching; W-band; SiGe BiCMOS; transformer match; PHASED-ARRAY; RECEIVER;
D O I：
10.1109/gsmm.2019.8797655
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A W-band low noise amplifier is designed based on the 0.13 mu m SiGe BiCMOS process. The two-stage fully differential structure consisting of Cascode is used. In order to achieve good input and output matching performance, transformer matching is adopted between the two stages. Electromagnetic simulation is performed using 3D electromagnetic field simulation software. The simulation results show that the input and output matched well in the 90-100 GHz band. At 94 GHz point, the small signal gain is 15.6 dB meanwhile the input 1 dB compression point power is -14 dBm. The noise figure is 6 dB. The chip size is only 0.48 mm x 0.19 mm. This low noise amplifier has good microwave characteristic which is suitable for communication, radar, imaging and other fields.
引用
收藏
页码：93 / 95
页数：3
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