Characterisation studies of silicon photomultipliers

被引：189

作者：

Eckert, Patrick ^{[1
]}

Schultz-Coulon, Hans-Christian ^{[1
]}

Shen, Wei ^{[1
]}

Stamen, Rainer ^{[1
]}

Tadday, Alexander ^{[1
]}

机构：

[1] Univ Heidelberg, Kirchhoff Inst Phys, D-69120 Heidelberg, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2010年 / 620卷 / 2-3期

关键词：

Silicon photomultiplier; Multi pixel photon counter; Geiger mode avalanche photodiode; Photon detection efficiency; AVALANCHE PHOTODIODES; DETECTOR; PHOTONS; LIGHT;

D O I：

10.1016/j.nima.2010.03.169

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper describes an experimental setup that has been developed to measure and characterise properties of silicon photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the photon detection efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000 nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs-three HAMAMATSU MPPCs and one SensL SPM-are presented and compared. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：217 / 226

页数：10

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