Measurement of modal gain in 1.1 μm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructures

被引：18

作者：

Mi, Z ^{[1
]}

Fathpour, S ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 23期

关键词：

D O I：

10.1049/el:20053374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-pass optical gain of self-assembled InGaAs/GaAs p-doped tunnel injection quantum dot laser heterostructures emitting at 1.1 mu m is measured by the multisection device technique. The heterostructures, consisting of three layers of quantum dots in the active region, demonstrate net modal gain as high as 57 cm(-1).

引用

页码：1282 / 1284

页数：3

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