Precise Control of the Number of Layers of Graphene by Picosecond Laser Thinning

被引:90
作者
Lin, Zhe [1 ]
Ye, Xiaohui [1 ]
Han, Jinpeng [1 ]
Chen, Qiao [1 ,2 ]
Fan, Peixun [1 ]
Zhang, Hongjun [1 ]
Xie, Dan [3 ]
Zhu, Hongwei [1 ,2 ]
Zhong, Minlin [1 ]
机构
[1] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
[2] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[3] Tsinghua Univ, Inst Microelect, Tsinghua Natl Lab Informat Sci & Technol TNList, Beijing 100084, Peoples R China
基金
美国国家科学基金会;
关键词
REMOVAL;
D O I
10.1038/srep11662
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The properties of graphene can vary as a function of the number of layers (NOL). Controlling the NOL in large area graphene is still challenging. In this work, we demonstrate a picosecond (ps) laser thinning removal of graphene layers from multi-layered graphene to obtain desired NOL when appropriate pulse threshold energy is adopted. The thinning process is conducted in atmosphere without any coating and it is applicable for graphene films on arbitrary substrates. This method provides many advantages such as one-step process, non-contact operation, substrate and environment-friendly, and patternable, which will enable its potential applications in the manufacturing of graphene-based electronic devices.
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页数:7
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