Perspectives on thermoelectrics: from fundamentals to device applications

被引：1072
作者：
Zebarjadi, M. [1 ]
Esfarjani, K. [1 ]
Dresselhaus, M. S. [2 ,3 ]
Ren, Z. F. [4 ]
Chen, G. [1 ]
机构：
[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
[2] MIT, Dept Phys, Cambridge, MA 02139 USA
[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[4] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA
来源：
ENERGY & ENVIRONMENTAL SCIENCE | 2012年 / 5卷 / 01期
关键词：
FIGURE-OF-MERIT; LATTICE THERMAL-CONDUCTIVITY; IRREVERSIBLE-PROCESSES; NANOSTRUCTURED THERMOELECTRICS; ELECTRONIC-STRUCTURE; PHONON TRANSPORT; GREENS-FUNCTION; BAND-GAPS; PERFORMANCE; SEMICONDUCTOR;
D O I：
10.1039/c1ee02497c
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
This review is an update of a previous review (A. J. Minnich, et al., Energy Environ. Sci., 2009, 2, 466) published two years ago by some of the co-authors, focusing on progress made in thermoelectrics over the past two years on charge and heat carrier transport, strategies to improve the thermoelectric figure of merit, with new discussions on device physics and applications, and assessing challenges on these topics. Understanding of phonon transport in bulk materials has advanced significantly as the first-principles calculations are applied to thermoelectric materials, and experimental tools are being developed. Some new strategies have been developed to improve electron transport in thermoelectric materials. Fundamental questions on phonon and electron transport across interfaces and in thermoelectric materials remain. With thermoelectric materials reaching high ZT values well above one, the field is ready to take a step forward and go beyond the materials' figure of merit. Developing device contacts and module fabrication techniques, developing a platform for efficiency measurements, and identifying applications are becoming increasingly important for the future of thermoelectrics.
引用
收藏
页码：5147 / 5162
页数：16
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