Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

被引：5

作者：

D'Costa, Vijay Richard ^{[1
]}

Tan, Kian Hua ^{[2
]}

Jia, Bo Wen ^{[2
]}

Yoon, Soon Fatt ^{[2
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 22期

基金：

新加坡国家研究基金会;

关键词：

DIELECTRIC FUNCTION; GE; LAYERS; DEPENDENCE; EPILAYERS; MODEL; INAS;

D O I：

10.1063/1.4922586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epitaxy under conditions intended to form 90 degrees misfit dislocations at the InSb-GaAs interface. The complex dielectric function obtained in a wide spectroscopic range from 0.06-4.6 eV shows the critical point transitions E-0, E-1, E-1 + Delta(1), E '(0), and E-2. The amplitudes, energy transitions, broadenings, and phase angles have been determined using a derivative analysis. Comparing film and bulk critical point results reveal that the epitaxial film is nearly relaxed and has bulk-like optical characteristics. (C) 2015 AIP Publishing LLC.

引用

页数：6

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