Tuning the Interaction Energy of Hydrogen Bonds: The Effect of the Substituent

被引:25
|
作者
Mata, Ignasi [1 ]
Molins, Elies [1 ]
Alkorta, Ibon [2 ]
Espinosa, Enrique [3 ]
机构
[1] ICMAB CSIC, Bellaterra 08193, Spain
[2] IQM CSIC, Madrid 28006, Spain
[3] Nancy Univ, Inst Jean Barriol, Lab Cristallog Resonance Magnet & Modelisat, CRM2,CNRS,UMR 7036, F-54506 Vandoeuvre Les Nancy, France
来源
JOURNAL OF PHYSICAL CHEMISTRY A | 2011年 / 115卷 / 45期
关键词
ELECTRON-DENSITY DISTRIBUTION; MOLECULAR-DYNAMICS SIMULATIONS; INTERMOLECULAR DISTANCE; TOPOLOGICAL PROPERTIES; CHARGE-DENSITY; ATOMS; COMPLEXES; WEAK; SPECTROSCOPY; INTEGRATION;
D O I
10.1021/jp202917z
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effect of the substituent R in the hydrogen bonding properties of FH center dot center dot center dot FR (R = H, Al, Li, Cl and CCH) complexes has been studied by theoretical calculations. The dependency of the interaction energy with the hydrogen bond distance and R is explained in terms of the topologies of the electron density and the electrostatic potential. A simple model of the hydrogen bond interaction energy, which can be assimilated to an interaction potential, is defined in terms of a stabilizing mutual polarization of the monomers and an overall destabilizing contribution associated with the electron density reorganization when the overlap of the closed shells is large enough. This model shows an excellent agreement with the ab initio interaction energies and is common for all the analyzed complexes. The substituent effect is represented in the model by a single parameter that can be calculated from the electron distribution in the acceptor atom region. The perturbation in the hydrogen bonding interaction induced by the change of R presents a close similarity with that produced by an external electric field of the same order of magnitude than those found in crystalline solids, indicating that both perturbations should play a significant and similar role on the properties of hydrogen bonds in condensed matter.
引用
收藏
页码:12561 / 12571
页数:11
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