Ferroelectric-relaxor behavior of highly epitaxial Barium Zirconium Titanate thin films

被引:1
作者
Pal, Madhuparna [1 ]
Liu, Ming [2 ]
Ma, C. R. [2 ]
Chen, C. L. [2 ]
Guo, R. [1 ]
Bhalla, A. [1 ]
机构
[1] Univ Texas San Antonio, Dept Elect Engn, San Antonio, TX 78249 USA
[2] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA
基金
美国国家科学基金会;
关键词
Ferroelectric-relaxor; Atomic Force Microscope; Piezoresponse Force Microscopy; Scanning Capacitance Microscopy; MICROWAVE DIELECTRIC-PROPERTIES; FORCE MICROSCOPY; SINGLE-CRYSTALS; DOMAINS; MGO; BAZRXTI1-XO3; CERAMICS;
D O I
10.4028/www.scientific.net/JNanoR.34.67
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ferroelectric-relaxor behavior on highly epitaxial Barium Zirconium Titanate (Ba(Zr0.2Ti0.8)O-3) thin film was investigated using the Piezoresponse Force Microscopy specifically to investigate the onset of relaxor behavior. The surface roughness, microstructure and the grain size of the film were systematically studied. Ferroelectric switching at random localized points were observed at room temperature though it has been previously reported that the phase transition in BZT-20 occurs at 285K. Phase reversal with the reversal of the applied voltage was also seen. Scanning Capacitance Microscope has been employed to interrogate the localized change in the capacitance with change in voltage. The thin film sample showed the presence of ferroelectric nano regions at room temperature unlike its bulk counterparts which is paraelectric at room temperature.
引用
收藏
页码:67 / 72
页数:6
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