Performance Enhancement of GaN-Based Light-Emitting Diodes with Magnesium Nitride Inter-Layers

被引：0

作者：

Ahn, Su Chang ^{[1
,2
]}

Baek, Jong Hyeob ^{[1
]}

Kim, Sang-Mook ^{[1
]}

Lee, Byung-Teak ^{[2
]}

机构：

[1] Korea Photon Technol Inst KOPTI, Gwangju 500460, South Korea

[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Gwangju 500757, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2019年 / 19卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

MgxNy; Surface Texture; Light Extraction Efficiency; Light-Emitting Diodes; X-ray Photoelectron Spectroscopy; EPITAXIAL-LATERAL-OVERGROWTH; DISLOCATION DENSITY; FILMS; LEDS;

D O I：

10.1166/jnn.2019.16153

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High quality GaN epilayers were obtained by using a magnesium nitride (MgxNy) inter-layer. X-ray photoelectron spectroscopy (XPS) reveals Mg 2p core-level spectra from the MgxNy inter-layers. The roughness of the MgxNy layers increased with the growth time, though a prolonged processing time resulted in a decrease in the roughness. A high-resolution X-ray diffraction omega-scan rocking curve was used to reveal that the screw dislocation density (TDD) of GaN with an MgxNy inter-layer was reduced and the crystalline quality of the GaN epitaxial layer was enhanced. Furthermore, the luminous efficiency of an LED with the MgxNy layers was increased by 20% relative to a reference LED.

引用

页码：1490 / 1493

页数：4

共 17 条

[1]

Beaumont B, 1999, PHYS STATUS SOLIDI A, V176, P567, DOI 10.1002/(SICI)1521-396X(199911)176:1<567::AID-PSSA567>3.0.CO

[2]

2-Z

[3] Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template [J].

Chiu, C. H. ;

Yen, H. H. ;

Chao, C. L. ;

Li, Z. Y. ;

Yu, Peichen ;

Kuo, H. C. ;

Lu, T. C. ;

Wang, S. C. ;

Lau, K. M. ;

Cheng, S. J. .

APPLIED PHYSICS LETTERS, 2008, 93 (08)

[4] Self-organization of 3D triangular GaN nanoislands and the shape variation to hexagonal [J].

Fang, Zhilai ;

Kang, Junyong .

JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (22) :7889-7892

[5] Dislocation annihilation in GaN with multiple MgxNy/GaN buffer layers by metal organic chemical vapor deposition [J].

Fu, Y. K. ;

Tun, C. J. ;

Kuo, C. H. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06) :1499-+

[6] MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement [J].

Huang, Chen-Yang ;

Ku, Hao-Min ;

Liao, Chen-Zi ;

Chao, Shiuh .

OPTICS EXPRESS, 2010, 18 (10) :10674-10684

[7] A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy [J].

Kachi, T ;

Tomita, T ;

Itoh, K ;

Tadano, H .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :704-706

[8] Nanopatterned aluminum nitride template for high efficiency light-emitting diodes [J].

Kim, Sang-Mook ;

Park, Tae-Young ;

Park, Seong-Ju ;

Lee, Seung-Jae ;

Baek, Jong Hyeob ;

Park, Yun Chang ;

Jung, Gun Young .

OPTICS EXPRESS, 2009, 17 (17) :14791-14799

[9] Nitride-based blue LEDs with GaN/SiN double buffer layers [J].

Kuo, CH ;

Chang, SJ ;

Su, YK ;

Wang, CK ;

Wu, LW ;

Sheu, JK ;

Wen, TC ;

Lai, WC ;

Tsai, JM ;

Lin, CC .

SOLID-STATE ELECTRONICS, 2003, 47 (11) :2019-2022

[10] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

← 1 2 →