Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction

被引:8
|
作者
Xi, Kai [1 ]
Bi, Jinshun [1 ,2 ]
Chu, Jiamin [3 ]
Xu, Gaobo [1 ]
Li, Bo [1 ]
Wang, Haibin [3 ]
Liu, Ming [1 ]
Sandip, Majumdar [4 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100029, Peoples R China
[3] Hohai Univ, Sch Internet Things Engn, Changzhou 213022, Peoples R China
[4] Sri Sri Univ, Elect & Comp Engn Dept, Cuttack 754006, Orissa, India
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2020年 / 126卷 / 06期
基金
中国国家自然科学基金;
关键词
Tunnel field effect transistor; Logic device; Total ionization dose; gamma-ray; Rad-hard; SIMULATION; DESIGN; MOSFET; FET;
D O I
10.1007/s00339-020-03622-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
N-type tunnel field effect transistors (TFETs) with Si1-xGex/Si hetero-junction in the ultra-shallow N+ pocket region have been fabricated. This paper investigates the total ionization dose (TID) effects on the electrical characteristics of these N-type TFET devices, including transfer and output characteristics, via a Co-60 gamma-ray irradiation source. TID has little impact on the on-state current for TFETs with and without P well. With the increase in total dose, however, a shift in the transfer characteristics, such as the off-state current and subthreshold slope is observed. Under the same TID condition, TFETs with P well exhibit more robustness as compared to TFETs without P well. The characteristics under room temperature and high temperature annealing conditions after irradiation are also investigated. The underlying mechanisms, such as the interplay among bulk trapped charge in gate oxide-induced inversion and interface trap-induced trap-assisted-tunneling, are identified by TCAD simulation and are discussed in detail.
引用
收藏
页数:8
相关论文
共 50 条
  • [31] Improved Electrical Characteristics of P-type Tunnel Field-Effect Transistor With Source-Pocket Junction Formed Using High-Angle Implantation
    Xu, Gaobo
    Yin, Huaxiang
    Xu, Qiuxia
    Tao, Guilong
    Tian, Guoliang
    Li, Zhihao
    Bi, Jinshun
    Bu, Jianhui
    Wu, Zhenhua
    Zhang, Qingzhu
    Li, Yongliang
    Liu, Jinbiao
    Li, Junfeng
    Zhu, Huilong
    Zhao, Chao
    Wang, Wenwu
    2019 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2019,
  • [32] Non-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor
    Li Wei-Hua
    Zhuang Yi-Qi
    Du Lei
    Bao Jun-Lin
    ACTA PHYSICA SINICA, 2009, 58 (10) : 7183 - 7188
  • [33] Photoresponse of graphene field-effect-transistor with n-type Si depletion layer gate
    Shiho Kobayashi
    Yuki Anno
    Kuniharu Takei
    Takayuki Arie
    Seiji Akita
    Scientific Reports, 8
  • [34] Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature
    Wang, Luyang
    Park, Younghun
    Cui, Peng
    Bak, Sora
    Lee, Hanleem
    Lee, Sae Mi
    Lee, Hyoyoung
    CHEMICAL COMMUNICATIONS, 2014, 50 (10) : 1224 - 1226
  • [35] Investigation of organic n-type field-effect transistor performance on the polymeric gate dielectrics
    Mukherjee, Moumita
    Mukherjee, Biswanath
    Choi, Youngill
    Sim, Kyoseung
    Do, Junghwan
    Pyo, Seungmoon
    SYNTHETIC METALS, 2010, 160 (5-6) : 504 - 509
  • [36] Photoresponse of graphene field-effect-transistor with n-type Si depletion layer gate
    Kobayashi, Shiho
    Anno, Yuki
    Takei, Kuniharu
    Arie, Takayuki
    Akita, Seiji
    SCIENTIFIC REPORTS, 2018, 8
  • [37] n-type organic field-effect transistor based on interface-doped pentacene
    Ahles, M
    Schmechel, R
    von Seggern, H
    APPLIED PHYSICS LETTERS, 2004, 85 (19) : 4499 - 4501
  • [38] Photoswitching of an n-Type Organic Field Effect Transistor by a Reversible Photochromic Reaction in the Dielectric Film
    Lutsyk, Petro
    Janus, Krzysztof
    Sworakowski, Juliusz
    Generali, Gianluca
    Capelli, Raffaella
    Muccini, Michele
    JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (07): : 3106 - 3114
  • [39] Macro-Modeling for N-Type Feedback Field-Effect Transistor for Circuit Simulation
    Oh, Jong Hyeok
    Yu, Yun Seop
    MICROMACHINES, 2021, 12 (10)
  • [40] Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors
    Zheng, Qi-Wen
    Cui, Jiang-Wei
    Zhou, Hang
    Yu, De-Zhao
    Yu, Xue-Feng
    Guo, Qi
    CHINESE PHYSICS LETTERS, 2016, 33 (07)