Enhanced Output Power of Light-Emitting Diodes With Embedded Air-Gap Photonic Crystals by Nanosphere Lithography

被引：1

作者：

Du, Chengxiao ^{[1
]}

Zhang, Wanrong ^{[1
]}

Wei, Tongbo ^{[2
]}

Ji, Xiaoli ^{[2
]}

Li, Jinmin ^{[2
]}

Geng, Chong ^{[3
]}

Yan, Qingfeng ^{[4
]}

机构：

[1] Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China

[3] Hebei Univ Technol, Sch Elect & Informat Engn, Key Lab Elect Mat & Devices Tianjin, Tianjin 300401, Peoples R China

[4] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Chem, Beijing 100084, Peoples R China

来源：

IEEE PHOTONICS JOURNAL | 2017年 / 9卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Light-emitting diodes; photonic crystals; nanosphere lithography; light extraction efficiency;

D O I：

10.1109/JPHOT.2017.2750675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large-scale two-dimensional air-gap photonic crystals (PhCs) were embedded in an n-type GaN layer to enhance the light emission of GaN-based light-emitting diodes (LEDs). The embedded-PhCs were obtained through overgrowth on n-GaN templates, which had air holes array previously fabricated by using nanosphere lithography technology. The effects of the distance D from active region to PhCs on the light extraction efficiency (LEE) of LEDs are investigated by experiments and finite difference-time domain simulation. The PhC LEDs with D = 2370 nm showed an improved light output power by 80.8% on average at forward current of 350 mA without degradation of electrical performance compared to conventional LEDs. It is mainly attributed to the improved LEE by enhancing the interaction of the guided modes and the embedded air-gap PhCs.

引用

页数：7

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