Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit

被引：404

作者：

Li, Yao-Yi ^{[1
]}

Wang, Guang ^{[1
]}

Zhu, Xie-Gang ^{[1
]}

Liu, Min-Hao ^{[1
]}

Ye, Cun ^{[1
]}

Chen, Xi ^{[1
]}

Wang, Ya-Yu ^{[1
]}

He, Ke ^{[2
]}

Wang, Li-Li ^{[2
]}

Ma, Xu-Cun ^{[2
]}

Zhang, Hai-Jun ^{[2
]}

Dai, Xi ^{[2
]}

Fang, Zhong ^{[2
]}

Xie, Xin-Cheng ^{[2
]}

Liu, Ying ^{[3
]}

Qi, Xiao-Liang ^{[4
]}

Jia, Jin-Feng ^{[1
]}

Zhang, Shou-Cheng ^{[4
]}

Xue, Qi-Kun ^{[1
,2
]}

机构：

[1] Tsinghua Univ, Dept Phys, Key Lab Atom Mol & Nanosci, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[4] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 36期

关键词：

HGTE QUANTUM-WELLS; SINGLE DIRAC CONE; SURFACE; TRANSITION; PHASE;

D O I：

10.1002/adma.201000368

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.

引用

页码：4002 / 4007

页数：6

共 29 条

[1] Quantum spin Hall effect and topological phase transition in HgTe quantum wells [J].

Bernevig, B. Andrei ;

Hughes, Taylor L. ;

Zhang, Shou-Cheng .

SCIENCE, 2006, 314 (5806) :1757-1761

[2] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].

Chen, Y. L. ;

Analytis, J. G. ;

Chu, J. -H. ;

Liu, Z. K. ;

Mo, S. -K. ;

Qi, X. L. ;

Zhang, H. J. ;

Lu, D. H. ;

Dai, X. ;

Fang, Z. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. -X. .

SCIENCE, 2009, 325 (5937) :178-181

[3]

CHENG P, ARXIV10013220

[4] Topological insulators in three dimensions [J].

Fu, Liang ;

Kane, C. L. ;

Mele, E. J. .

PHYSICAL REVIEW LETTERS, 2007, 98 (10)

[5] p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications [J].

Hor, Y. S. ;

Richardella, A. ;

Roushan, P. ;

Xia, Y. ;

Checkelsky, J. G. ;

Yazdani, A. ;

Hasan, M. Z. ;

Ong, N. P. ;

Cava, R. J. .

PHYSICAL REVIEW B, 2009, 79 (19)

[6] A topological Dirac insulator in a quantum spin Hall phase [J].

Hsieh, D. ;

Qian, D. ;

Wray, L. ;

Xia, Y. ;

Hor, Y. S. ;

Cava, R. J. ;

Hasan, M. Z. .

NATURE, 2008, 452 (7190) :970-U5

[7] A tunable topological insulator in the spin helical Dirac transport regime [J].

Hsieh, D. ;

Xia, Y. ;

Qian, D. ;

Wray, L. ;

Dil, J. H. ;

Meier, F. ;

Osterwalder, J. ;

Patthey, L. ;

Checkelsky, J. G. ;

Ong, N. P. ;

Fedorov, A. V. ;

Lin, H. ;

Bansil, A. ;

Grauer, D. ;

Hor, Y. S. ;

Cava, R. J. ;

Hasan, M. Z. .

NATURE, 2009, 460 (7259) :1101-1105

[8] Observation of Unconventional Quantum Spin Textures in Topological Insulators [J].

Hsieh, D. ;

Xia, Y. ;

Wray, L. ;

Qian, D. ;

Pal, A. ;

Dil, J. H. ;

Osterwalder, J. ;

Meier, F. ;

Bihlmayer, G. ;

Kane, C. L. ;

Hor, Y. S. ;

Cava, R. J. ;

Hasan, M. Z. .

SCIENCE, 2009, 323 (5916) :919-922

[9] In situ reflection high-energy electron diffraction (RHEED) observation of Bi2Te3/Sb2Te3 multilayer film growth [J].

Iwata, Y ;

Kobayashi, H ;

Kikuchi, S ;

Hatta, E ;

Mukasa, K .

JOURNAL OF CRYSTAL GROWTH, 1999, 203 (1-2) :125-130

[10] Quantum spin hall insulator state in HgTe quantum wells [J].

Koenig, Markus ;

Wiedmann, Steffen ;

Bruene, Christoph ;

Roth, Andreas ;

Buhmann, Hartmut ;

Molenkamp, Laurens W. ;

Qi, Xiao-Liang ;

Zhang, Shou-Cheng .

SCIENCE, 2007, 318 (5851) :766-770

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