Photonic crystal vertical-cavity surface-emitting laser based on GaAs material

被引：1

作者：

Xu XingSheng ^{[1
]}

Wang ChunXia ^{[1
]}

Song Qian ^{[1
]}

Du Wei ^{[1
]}

Hu HaiYang ^{[1
]}

Zhao ZhiMin ^{[1
]}

Lu Lin ^{[1
]}

Kan Qiang ^{[1
]}

Chen HongDa ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

CHINESE SCIENCE BULLETIN | 2007年 / 52卷 / 18期

关键词：

photonic crystal; vertical cavity surface emitting laser; single mode;

D O I：

10.1007/s11434-007-0369-8

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A photonic crystal vertical-cavity-surface-emitting laser ( PC-VCSEL) with a wavelength of about 850 nm was realized. The direct-current electrically-driven PC-VCSELs with a minimum threshold current of 2 mA and a maximum threshold current of 13.5 mA were obtained. We fabricated a series of PC-VCSEL chips whose lattice constants are in the range from 0.5 to 3 mu m with different filling factors, and found that the laser characterization depends on the lattice constant, the filling factor, the size of cavity, etc.

引用

页码：2473 / 2476

页数：4

共 5 条

[1] Transverse modes of photonic crystal vertical-cavity lasers [J].