Valence band studies of MoS2 thin films synthesised by electrodeposition method

被引：6

作者：

Dam, Siddhartha ^{[1
]}

Thakur, Abhishek ^{[1
]}

Hussain, Shamima ^{[1
]}

机构：

[1] Univ Madras, UGCDAE CSR, Kalpakkam Node 603104, Tamil Nadu, India

来源：

MATERIALS TODAY-PROCEEDINGS | 2021年 / 46卷

关键词：

XPS; Valence band; Indium Tin Oxide; Electrodeposition; MoS2 thin film; CHEMICAL BATH DEPOSITION; HETEROJUNCTION;

D O I：

10.1016/j.matpr.2020.03.722

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of MoS2 were synthesied via electrodeposition. The films were characterized by X-Ray Diffraction, Raman spectroscopy, Field Emission Scanning Electron Microscopy, Optical Spectroscopy and X-ray Photoelectron Spectroscopy. The valence band maximum of the films were calculated from the XPS data. With the XPS and optical spectroscopy data, the band diagrams were calculated. The band alignment with Indium Tin Oxide (ITO) transparent conductive oxide was also deduced from the XPS data. The I-V characteristics of the ITO/MoS2 heterojunction was also studied. (c) 2019 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of the scientific committee of the Third International Conference on Materials Science (ICMS2020).

引用

收藏

页码：6127 / 6131

页数：5

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