Static Recording Properties of Super-Resolution Near-Field Structure with Antimony Bismuth Mask layer

被引：0
|
作者：
Jiang Laixin [1 ]
Wu Yiqun [1 ]
Wang Yang [1 ]
Wei Jingsong [1 ]
Fuxi Gan [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat Sci & Technol High Power Lasers, Shanghai 201800, Peoples R China
来源：
EIGHTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE AND 2008 INTERNATIONAL WORKSHOP ON INFORMATION DATA STORAGE | 2009年 / 7125卷
关键词：
Super-RENS; antimony bismuth; mask layer; recording properties; OPTICAL-PROPERTIES; MECHANISM; READOUT; DISK;
D O I：
10.1117/12.823390
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Super-resolution near-field structures (super-RENS) with antimony bismuth mask layer (Sb1-xBix, X=0, 0.1, 0.2 and 0.9) were fabricated by magnetron sputtering. AgInSbTe and ZnS-SiO2 were used as recording layer and dielectric layer respectively. Static recording tests with and without super-RENS were carried out using static recording tester whose laser wavelength is 406.7 and numerical aperture is 0.8. The recorded marks were observed by atomic force microscopy (AFM). The influence of Bi proportion in the films on the super-resolution recording properties were investigated.
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页数：5
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