Doping induced structural, band gap and photoluminescence properties of Cd0.9-xZn0.1CoxS nanoparticles

被引:6
作者
Devadoss, I. [1 ,2 ]
Muthukumaran, S. [1 ,3 ]
机构
[1] HH Rajahs Coll Autonomous, PG & Res Dept Phys, Pudukkottai 622001, Tamil Nadu, India
[2] Govt Arts Coll, Madurai 625106, Tamil Nadu, India
[3] Srinivasan Coll Arts & Sci, Dept Phys, Perambalur 621212, Tamil Nadu, India
关键词
OPTICAL-PROPERTIES; THIN-FILMS; CDS; MICROSTRUCTURE; COBALT; CO2+; ZNS;
D O I
10.1007/s10854-016-4713-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Co doped Cd0.9Zn0.1S (Co = 0-3 %) nanoparticles were prepared by a simple chemical co-precipitation method at room temperature. Optical and structural properties of the prepared samples have been studied using X-ray diffraction (XRD) and UV-visible spectrophotometer. XRD confirmed the cubic structure (phase singularity) of the samples and decline the secondary phase formation. Energy dispersive X-ray spectra showed the presence of Cd, Zn, Co and S in the appropriate proportion. Distortion produced by Co2+ in Cd-Zn-S made the lattice parameter of Co doped Cd0.9-xZn0.1S nanoparticles always higher than Cd0.9Zn0.1S. The reduced energy gap with Co substitution is mainly due to sp-d exchange interaction between the band electrons and the localized d electrons of the Co2+ ions substituting for host ions. The ultraviolet emission and visible band emission intensity and the modification in emission band position by Co-doping were discussed based on the size effect/change in structure and band gap. Based on the tailoring of energy gap and luminescence behavior, it can be concluded that Co-doped Cd0.9-xZn0.1S is a promising material for selective coatings for solar cells; use as antireflective coating materials, and for fabrication of optoelectronic devices.
引用
收藏
页码:7389 / 7397
页数:9
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