Calculation of Carrier Scattering in Mn-doped InGaAs Quantum Well with Hole-mediated Ferromagnetism

被引：0

作者：

Shchurova, Ljudmila ^{[1
]}

Kulbachinskii, Vladimir ^{[2
]}

机构：

[1] PN Lebedev Phys Inst, Leninsky Pr 53, Moscow 119991, Russia

[2] Moscow MV Lomonosov State Univ, Dept Low Temp Phys, Moscow, Russia

来源：

PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷

关键词：

Diluted magnetic semiconductor; Magnetotransport;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied thermodynamic, transport and magnetotransport properties of free charge carriers in the diluted magnetic semiconductor with a quantum well In0.17Ga0.83As in the GaAs, delta-doped by C and Mn. We have carried out thermodynamic calculations of the system composed of free holes, atoms and Mn- ions to define hole density in the quantum well. Then, we have calculated temperature dependence of resistance and magnetoresistance of free holes in the quantum well. Contributions of various hole-scattering mechanisms in resistance were analysed. Reasons for the occurrence of negative magnetoresistance are explained quantitatively as the reduction of the spin-flip scattering by aligning spins in magnetic field.

引用

页码：447 / +

页数：2

共 3 条

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