Coherent spectroscopy of semiconductor quantum wires

被引：0

作者：

Bayer, M ^{[1
]}

Braun, W ^{[1
]}

Baars, T ^{[1
]}

Forchel, A ^{[1
]}

Reinecke, TL ^{[1
]}

Walck, SN ^{[1
]}

Schmitt, OM ^{[1
]}

Banyai, L ^{[1
]}

Haug, H ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

ULTRAFAST PHENOMENA IN SEMICONDUCTORS II | 1998年 / 3277卷

关键词：

four-wave mixing; excitons; quantum wires;

D O I：

10.1117/12.306145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In0.135Ga0.865As/GaAs quantum wires with widely varying widths down to 29 nm have been studied by degenerate four-wave mixing. The exciton binding energy E-B in the wires has been determined by quantum beat spectroscopy. We find an increase of E-B with decreasing wire width, giving clear evidence for the lateral confinement of the excitons in the wire structures. Further, the exciton dephasing kinetics due to exciton-phonon and exciton-exciton scattering is studied. For both dephasing mechanisms we find an increase of the scattering rates with decreasing wire width. For the exciton-phonon scattering the increase is rather weak, while for the exciton-exciton scattering a drastic increase of the scattering rate is observed.

引用

页码：119 / 127

页数：9

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