Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate

被引：29

作者：

Boutchich, M. ^{[1
]}

Arezki, H. ^{[1
]}

Alamarguy, D. ^{[1
]}

Ho, K-I ^{[2
]}

Sediri, H. ^{[3
,4
]}

Guenes, F. ^{[1
]}

Alvarez, J. ^{[1
]}

Kleider, J. P. ^{[1
]}

Lai, C. S. ^{[2
]}

Ouerghi, A. ^{[3
]}

机构：

[1] Univ Paris 06, Sorbonne Univ, Univ Paris 11, LGEP,CNRS,UMR8507,SUPELEC, F-91192 Gif Sur Yvette, France

[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan

[3] CNRS, LPN, F-91460 Marcoussis, France

[4] Ctr Rech & Technol Energie, Lab Photovolta, Hammam Lif 2050, Tunisia

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 23期

关键词：

CHARGE-TRANSFER; SOLAR-CELLS; HETEROSTRUCTURES; TRANSISTORS; HYDROGEN; SILICON; OXIDE;

D O I：

10.1063/1.4903866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large-area graphene film doped with nitrogen is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, and fuel cells among many others. Here, we report on the structural and electronic properties of nitrogen doped trilayer graphene on 4H-SiC (0001) grown under atmospheric pressure. The trilayer nature of the growth is evidenced by scanning transmission electron microscopy. X-ray photoelectron spectroscopy shows the incorporation of 1.2% of nitrogen distributed in pyrrolic-N, and pyridinic-N configurations as well as a graphitic-N contribution. This incorporation causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. Ultraviolet photoelectron spectroscopy shows a decrease of the work function of 0.3 eV due to the N-type doping of the nitrogen atoms in the carbon lattice and the edge defects. A top gate field effect transistor device has been fabricated and exhibits carrier mobilities up to 1300 cm(2)/V s for holes and 850 cm(2)/V s for electrons at room temperature. (C) 2014 AIP Publishing LLC.

引用

页数：5