Pixel-based OPC optimization based on conjugate gradients

被引:72
作者
Ma, Xu [1 ]
Arce, Gonzalo R. [2 ]
机构
[1] Beijing Inst Technol, Key Lab Photoelect Imaging Technol & Syst, Minist Educ China, Sch Optoelect, Beijing 100081, Peoples R China
[2] Univ Delaware, Dept Elect & Comp Engn, Newark, DE USA
来源
OPTICS EXPRESS | 2011年 / 19卷 / 03期
关键词
PARTIALLY COHERENT ILLUMINATION; BINARY MASK OPTIMIZATION; RESOLUTION ENHANCEMENT; INVERSE LITHOGRAPHY; OPTICAL LITHOGRAPHY; DESIGN; CONVERGENCE; MICROLITHOGRAPHY; ALGORITHMS; SYSTEMS;
D O I
10.1364/OE.19.002165
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Optical proximity correction (OPC) methods are resolution enhancement techniques (RET) used extensively in the semiconductor industry to improve the resolution and pattern fidelity of optical lithography. In pixel-based OPC (PBOPC), the mask is divided into small pixels, each of which is modified during the optimization process. Two critical issues in PBOPC are the required computational complexity of the optimization process, and the manufacturability of the optimized mask. Most current OPC optimization methods apply the steepest descent (SD) algorithm to improve image fidelity augmented by regularization penalties to reduce the complexity of the mask. Although simple to implement, the SD algorithm converges slowly. The existing regularization penalties, however, fall short in meeting the mask rule check (MRC) requirements often used in semiconductor manufacturing. This paper focuses on developing OPC optimization algorithms based on the conjugate gradient (CG) method which exhibits much faster convergence than the SD algorithm. The imaging formation process is represented by the Fourier series expansion model which approximates the partially coherent system as a sum of coherent systems. In order to obtain more desirable manufacturability properties of the mask pattern, a MRC penalty is proposed to enlarge the linear size of the sub-resolution assistant features (SRAFs), as well as the distances between the SRAFs and the main body of the mask. Finally, a projection method is developed to further reduce the complexity of the optimized mask pattern. (C) 2011 Optical Society of America
引用
收藏
页码:2165 / 2180
页数:16
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