NiSi contact metallization using electroless Ni deposition on Pd-activated self-assembled monolayer (SAM) on p-type Si(100)

In this paper we describe a novel method to form NiSi contacts using electroless plating of Nickel or Ni alloy on I'd activated self-assembled monolayer (SAM) on p-type Si(100). Such method allows uniform deposition of very thin, <30 run, Ni or Ni alloy films. Clean, oxide free, Si substrate was covered with aminopropyltriethoxysilane (APTES) self-assembled monolayer. The surface was activated with Pd-citrate solution followed by electroless plating. The samples were annealed for I h in vacuum (similar to 10(-6) Torr) forming the silicide layer. The annealing temperatures were 400 degrees C for NiP alloy and 500 degrees C for NiPW alloy. X-ray diffraction (XRD) measurement confirmed the presence of NiSi phase after annealing. The silicides material properties were characterized using secondary electron microscopy (SEM) analysis, X-ray diffraction (XRD) and X-ray photon spectroscopy (XPS) profiling. The results are reported and summarized. (C) 2007 Elsevier B.V. All rights reserved.