In situ scanning electron microscopy of epitaxial processes

被引：0

作者：

Homma, Y ^{[1
]}

Yamaguchi, H ^{[1
]}

Finnie, P ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS | 1999年 / 164期

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Using scanning electron microscopy we have observed the nucleation and growth of 2-D islands in the initial stages of GaAs growth by molecular beam epitaxy and migration enhanced epitaxy. We have made in situ observations of site selective growth on an atomic-step-controlled Si substrate, and demonstrate the formation of a regular network pattern of GaAs and a regular array of Au dots on the Si substrate.

引用

页码：161 / 166

页数：6

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