In situ scanning electron microscopy of epitaxial processes

被引：0
作者：
Homma, Y [1 ]
Yamaguchi, H [1 ]
Finnie, P [1 ]
机构：
[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS | 1999年 / 164期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Using scanning electron microscopy we have observed the nucleation and growth of 2-D islands in the initial stages of GaAs growth by molecular beam epitaxy and migration enhanced epitaxy. We have made in situ observations of site selective growth on an atomic-step-controlled Si substrate, and demonstrate the formation of a regular network pattern of GaAs and a regular array of Au dots on the Si substrate.
引用
收藏
页码：161 / 166
页数：6
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