In situ scanning electron microscopy of epitaxial processes

被引：0
|
作者：
Homma, Y [1 ]
Yamaguchi, H [1 ]
Finnie, P [1 ]
机构：
[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS | 1999年 / 164期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Using scanning electron microscopy we have observed the nucleation and growth of 2-D islands in the initial stages of GaAs growth by molecular beam epitaxy and migration enhanced epitaxy. We have made in situ observations of site selective growth on an atomic-step-controlled Si substrate, and demonstrate the formation of a regular network pattern of GaAs and a regular array of Au dots on the Si substrate.
引用
收藏
页码：161 / 166
页数：6
相关论文
共 50 条
  • [1] In situ scanning electron microscopy
    Torres, E. A.
    Ramirez, A. J.
    SCIENCE AND TECHNOLOGY OF WELDING AND JOINING, 2011, 16 (01) : 68 - 78
  • [2] Electron tunnelling in electrochemical processes and in situ scanning tunnel microscopy of structurally organized systems
    Andersen, JET
    Kornyshev, AA
    Kuznetsov, AM
    Madsen, LL
    Moller, P
    Ulstrup, J
    ELECTROCHIMICA ACTA, 1997, 42 (05) : 819 - 831
  • [3] Electron tunnelling in electrochemical processes and in situ scanning tunnel microscopy of structurally organized systems
    Technical Univ of Denmark, Lyngby, Denmark
    Electrochim Acta, 5 (819-831):
  • [4] Surface-roughening processes in GaAs MBE studied by in situ scanning electron microscopy
    Tanahashi, K
    Kawamura, Y
    Inoue, N
    Homma, Y
    Osaka, J
    JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) : 205 - 210
  • [5] Island growth and surface roughness scaling of epitaxial GaAs on Si observed by in situ scanning electron microscopy
    Finnie, P
    Homma, Y
    PHYSICAL REVIEW B, 1999, 59 (23) : 15240 - 15245
  • [6] PVD processes: Scanning electron microscopy (SEM)
    Mattox, DM
    PLATING AND SURFACE FINISHING, 1998, 85 (07): : 38 - 39
  • [7] In-situ scanning electron microscopy of surface roughening processes in GaAs molecular beam epitaxy
    Tanahashi, K
    Kawamura, Y
    Inoue, N
    Homma, Y
    Osaka, J
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 1998, 160 : 67 - 70
  • [8] In situ ion bombardment technique for scanning electron microscopy
    Hauffe, W
    Opitz, J
    ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2, 1998, : 517 - 518
  • [9] Tribometer for In Situ Scanning Electron Microscopy of Microstructured Contacts
    B. Murarash
    M. Varenberg
    Tribology Letters, 2011, 41 : 319 - 323
  • [10] Tribometer for In Situ Scanning Electron Microscopy of Microstructured Contacts
    Murarash, B.
    Varenberg, M.
    TRIBOLOGY LETTERS, 2011, 41 (02) : 319 - 323
12345