Electron interaction with domain walls in antiferromagnetically coupled multilayers

For antiferromagnetically coupled Fe/Cr multilayers the low-field contribution to the resistivity rho(DW), which is caused by the domain walls, is strongly enhanced at low temperatures. The low-temperature resistivity rho(DW) varies according to a power law, rho(DW)(T) = rho(DW)(0) - A . T-alpha with the exponent alpha similar or equal to 0.7-1. This behavior cannot be explained assuming ballistic electron transport through the domain walls. It is necessary to invoke the suppression of anti-localization effects (positive quantum correction to conductivity) by the non-uniform gauge fields caused by the domain walls.