Field emission properties of ion beam synthesized SiC/Si heterostructures by MEVVA implantation

被引：0

作者：

Chen, DH ^{[1
]}

Wong, SP ^{[1
]}

Cheung, WY ^{[1
]}

Luo, EZ ^{[1
]}

Wu, W ^{[1
]}

Xu, JB ^{[1
]}

Wilson, IH ^{[1
]}

Kwok, RWM ^{[1
]}

机构：

[1] Chinese Univ Hong Kong, Dept Elect Engn & Mat Sci, Shatin, Hong Kong

来源：

MATERIALS ISSUES IN VACUUM MICROELECTRONICS | 1998年 / 509卷

关键词：

D O I：

10.1557/PROC-509-199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Planar SiC/Si heterostructures were formed by high dose carbon implantation using a metal vapor vacuum are ion source. The variations of the field emission properties with the implant dose and annealing conditions were studied. A remarkabIy low turn-on field of 1V/mu m was observed from a sample implanted at 35 keV to a dose of 1.0x10(18) cm(-2) with subsequent annealing in nitrogen at 1200 degrees C for 2h. The chemical composition depth profiles were determined from x-ray photoelectron spectroscopy and the surface morphology was observed by atomic force microscopy. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission.

引用

页码：199 / 204

页数：6

共 50 条

[31] Behavior of PET implanted by Ti, Ag, Si and C ion using MEVVA implantation [J].

Wu, YG ;

Zhang, TH ;

Zhang, YW ;

Zhang, HW ;

Zhang, XJ ;

Zhou, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 173 (03) :292-298

[32] Formation and characterization of 3C-SIC by carbon-ion implantation into silicon with a mevva ion source [J].

Wan, Y. Z. ;

Xiong, G. Y. ;

Song, F. ;

Luo, H. L. ;

Huang, Y. ;

He, F. ;

Guo, L. B. ;

Wang, Y. L. .

SURFACE REVIEW AND LETTERS, 2007, 14 (06) :1103-1106

[33] Modification of friction and wear properties of PET membrane fabrics by MEVVA ion implantation [J].

Oktem, T. ;

Tarakcoglu, I. ;

Ozdogan, E. ;

Oztarhan, A. ;

Namligoz, E. S. ;

Karaaslan, A. ;

Tek, Z. .

MATERIALS CHEMISTRY AND PHYSICS, 2008, 108 (2-3) :208-213

[34] Characterization and light emission properties of β-FeSi2 precipitates in Si synthesized by metal vapor vacuum arc ion implantation [J].

Gao, Y ;

Wong, SP ;

Cheung, WY ;

Shao, G ;

Homewood, KP .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 :317-320

[35] Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing [J].

Markwitz, A. ;

Johnson, S. ;

Rudolphi, M. .

APPLIED PHYSICS LETTERS, 2006, 89 (15)

[36] Patterning SiC nanoprecipitate in Si single crystals by simultaneous dual- beam ion implantation [J].

Gihan Velişa ;

Patrick Trocellier ;

Lionel Thomé ;

Sylvain Vaubaillon ;

Gaël Sattonnay ;

Sandrine Miro ;

Yves Serruys .

Journal of Materials Science, 2014, 49 :4899-4904

[37] Patterning SiC nanoprecipitate in Si single crystals by simultaneous dual- beam ion implantation [J].

Velisa, Gihan ;

Trocellier, Patrick ;

Thome, Lionel ;

Vaubaillon, Sylvain ;

Sattonnay, Gael ;

Miro, Sandrine ;

Serruys, Yves .

JOURNAL OF MATERIALS SCIENCE, 2014, 49 (14) :4899-4904

[38] Structural and optical properties of Si/β-FeSi2/Si heterostructures fabricated by Fe ion implantation and Si MBE [J].

Galkin, N. G. ;

Chusovitin, E. A. ;

Goroshko, D. L. ;

Bayazitov, R. M. ;

Batalov, R. I. ;

Shamirzaev, T. S. ;

Gutakovsriy, A. K. ;

Zhuravlev, K. S. ;

Latyshev, A. V. .

SEVENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING, 2007, 6669

[39] PHOTOLUMINESCENCE OF beta -SiC SYNTHESIZED BY THE ION IMPLANTATION METHOD. [J].

Akimchenko, I.P. ;

Vavilov, V.S. ;

Krasnopevtsev, V.V. ;

Milyutin, Yu.V. ;

Chan Kim Loi .

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (05) :659-660

[40] Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation [J].

Chow, CF ;

Gao, Y ;

Wong, SP ;

Ke, N ;

Li, Q ;

Cheung, WY ;

Shao, G ;

Lourenco, MA ;

Homewood, KP .

Amorphous and Nanocrystalline Silicon Science and Technology-2005, 2005, 862 :507-512

← 1 2 3 4 5 →