Tight-binding simulation of silicon and germanium nanocrystals

被引：4
作者：
Gert, A. V. [1 ]
Nestoklon, M. O. [1 ]
Prokofiev, A. A. [1 ]
Yassievich, I. N. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2017年 / 51卷 / 10期
基金：
俄罗斯基础研究基金会;
关键词：
CARRIER MULTIPLICATION; QUANTUM-CONFINEMENT; OPTICAL-PROPERTIES; LIGHT-EMISSION; SI; PHOTOLUMINESCENCE; GE; MODEL; NANOSTRUCTURES; SEMICONDUCTORS;
D O I：
10.1134/S1063782617100098
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended s, p, d, and s* basis is explained in details and the results obtained with the use of this method are presented.
引用
收藏
页码：1274 / 1289
页数：16
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