Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field

被引：31

作者：

Sim, BC ^{[1
]}

Lee, IK ^{[1
]}

Kim, KH ^{[1
]}

Lee, HW ^{[1
]}

机构：

[1] LG Siltron, Crystal Growth Technol Team, Gumi 730724, Gyeong, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 3-4期

关键词：

magnetic field; oxygen concentration; Czochralski method; semiconducting silicon;

D O I：

10.1016/j.jcrysgro.2004.12.037

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Two hundred millimeter single crystals with various oxygen concentrations are grown in the cusp-magnetic Czochralski method, and the effects of heating condition (which corresponds to different crucible positions with the fixed heater), the seed rotation and argon flow rate on the oxygen concentration and its distribution in the crystal are experimentally investigated. The oxygen concentration decreases with increasing melt level because of lower temperature at the bottom of the crucible. The oxygen radial gradients are less than 2%. Oxygen concentration decreases as the argon flow rate increases. Large single crystal with the extremely low oxygen concentrations is possible in the Czochralski method. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：455 / 459

页数：5

共 10 条

[1] Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields [J].

Kakimoto, K .

JOURNAL OF CRYSTAL GROWTH, 2001, 230 (1-2) :100-107

[2] The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals [J].

Machida, N ;

Suzuki, Y ;

Abe, K ;

Ono, N ;

Kida, M ;

Shimizu, Y .

JOURNAL OF CRYSTAL GROWTH, 1998, 186 (03) :362-368

[3] Oscillatory thermocapillary convection in open cylindrical annuli. Part 1. Experiments under microgravity [J].

Schwabe, D ;

Zebib, A ;

Sim, BC .

JOURNAL OF FLUID MECHANICS, 2003, 491 :239-258

[4] Buoyant-thermocapillary and pure thermocapillary convective instabilities in Czochralski systems [J].

Schwabe, D .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 :1849-1853

[5]

SHIMURA F, 1989, SEMICONDUCTOR SILICO, P129

[6] Thermocapillary convection in cylindrical liquid bridges and annuli [J].

Sim, BC ;

Zebib, A .

COMPTES RENDUS MECANIQUE, 2004, 332 (5-6) :473-486

[7] Oscillatory thermocapillary convection in open cylindrical annuli. Part 2. Simulations [J].

Sim, BC ;

Zebib, A ;

Schwabe, D .

JOURNAL OF FLUID MECHANICS, 2003, 491 :259-274

[8] Thermocapillary convection in liquid bridges with undeformable curved surfaces [J].

Sim, BC ;

Zebib, A .

JOURNAL OF THERMOPHYSICS AND HEAT TRANSFER, 2002, 16 (04) :553-561

[9] Controlling oxygen concentration and distribution in 200 mm diameter Si crystals using the electromagnetic Czochralski (EMCZ) method [J].

Watanabe, M ;

Eguchi, M ;

Wang, W ;

Hibiya, T ;

Kuragaki, S .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 III) :1657-1662

[10] Transient three-dimensional numerical computation for unsteady oxygen concentration in a silicon melt during a Czochralski process under a cusp-shaped magnetic field [J].

Won, YC ;

Kakimoto, K ;

Ozoe, H .

JOURNAL OF CRYSTAL GROWTH, 2001, 233 (04) :622-630

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