Injection-Locked CMOS Frequency Doublers for μ-Wave and mm-Wave Applications

被引:60
|
作者
Monaco, Enrico [1 ,2 ]
Pozzoni, Massimo [3 ]
Svelto, Francesco [4 ]
Mazzanti, Andrea [4 ]
机构
[1] Univ Modena & Reggio Emilia, Pavia, Italy
[2] Ist Univ Super Pavia, Pavia, Italy
[3] STMicroelectronics, Pavia, Italy
[4] Univ Pavia, I-27100 Pavia, Italy
关键词
Frequency doubler; frequency multiplier; injection locking; microwaves; millimeter waves; mmw; push-push; LOW-POWER; BAND; RECEIVER; DESIGN; MMICS; OSCILLATORS; DIVIDERS;
D O I
10.1109/JSSC.2010.2049780
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
On-chip frequency generators for high frequency applications suffer from degradation of key passive components, variable capacitors in particular. In this framework, frequency multipliers can play a key role, allowing the design of voltage-controlled oscillators running at a frequency lower than required with advantage in terms of signal spectral purity and frequency tuning range. In this paper we present two injection locked frequency doublers for Ku-band and F-band applications respectively. Despite differences in implementation details, the same topology where a push-push pair injects a double frequency tone locking an autonomous differential oscillator is adopted. The circuits require limited input signal swing and provide a differential output over a broad frequency range. Dissipating 5.2 mW, the Ku-band multiplier, realized in a 0.13 mu m CMOS node, displays an operation bandwidth from 11 GHz to 15 GHz with a peak voltage swing on each output of 470 mV. The F-band multiplier, realized in 65 nm CMOS technology, displays an operation bandwidth from 106 GHz to 128 GHz with a peak voltage swing on each output of 330 mV and a power dissipation of 6 mW. A prototype including the multiplier, driven by a half-frequency standard LC-tank VCO, demonstrates an outstanding 13.1% tuning range around 115 GHz.
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页码:1565 / 1574
页数:10
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