Band gap engineering in polymers through chemical doping and applied mechanical strain

被引:15
作者
Lanzillo, Nicholas A. [1 ,2 ]
Breneman, Curt M. [1 ,2 ,3 ]
机构
[1] Rensselaer Polytech Inst, Ctr Biotechnol & Interdisciplinary Studies, 110 8th St, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Rensselaer Exploratory Ctr Cheminformat Res, 110 8th St, Troy, NY 12180 USA
[3] Rensselaer Polytech Inst, Dept Chem & Chem Biol, 110 8th St, Troy, NY 12180 USA
关键词
polymer; band gap; strain; DENSITY; SILICON;
D O I
10.1088/0953-8984/28/32/325502
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report simulations based on density functional theory and many-body perturbation theory exploring the band gaps of common crystalline polymers including polyethylene, polypropylene and polystyrene. Our reported band gaps of 8.6 eV for single-chain polyethylene and 9.1 eV for bulk crystalline polyethylene are in excellent agreement with experiment. The effects of chemical doping along the polymer backbone and side-groups are explored, and the use mechanical strain as a means to modify the band gaps of these polymers over a range of several eV while leaving the dielectric constant unchanged is discussed. This work highlights some of the opportunities available to engineer the electronic properties of polymers with wide-reaching implications for polymeric dielectric materials used for capacitive energy storage.
引用
收藏
页数:6
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