Band gap engineering in polymers through chemical doping and applied mechanical strain

被引:15
作者
Lanzillo, Nicholas A. [1 ,2 ]
Breneman, Curt M. [1 ,2 ,3 ]
机构
[1] Rensselaer Polytech Inst, Ctr Biotechnol & Interdisciplinary Studies, 110 8th St, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Rensselaer Exploratory Ctr Cheminformat Res, 110 8th St, Troy, NY 12180 USA
[3] Rensselaer Polytech Inst, Dept Chem & Chem Biol, 110 8th St, Troy, NY 12180 USA
关键词
polymer; band gap; strain; DENSITY; SILICON;
D O I
10.1088/0953-8984/28/32/325502
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report simulations based on density functional theory and many-body perturbation theory exploring the band gaps of common crystalline polymers including polyethylene, polypropylene and polystyrene. Our reported band gaps of 8.6 eV for single-chain polyethylene and 9.1 eV for bulk crystalline polyethylene are in excellent agreement with experiment. The effects of chemical doping along the polymer backbone and side-groups are explored, and the use mechanical strain as a means to modify the band gaps of these polymers over a range of several eV while leaving the dielectric constant unchanged is discussed. This work highlights some of the opportunities available to engineer the electronic properties of polymers with wide-reaching implications for polymeric dielectric materials used for capacitive energy storage.
引用
收藏
页数:6
相关论文
共 45 条
[11]   Truncation of periodic image interactions for confined systems [J].
Ismail-Beigi, Sohrab .
PHYSICAL REVIEW B, 2006, 73 (23)
[12]   Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains [J].
Johari, Priya ;
Shenoy, Vivek B. .
ACS NANO, 2012, 6 (06) :5449-5456
[13]   Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors [J].
Kang, Jiahao ;
He, Yu ;
Zhang, Jinyu ;
Yu, Xinxin ;
Guan, Ximeng ;
Yu, Zhiping .
APPLIED PHYSICS LETTERS, 2010, 96 (25)
[14]   POLYMER CRYSTALS [J].
KELLER, A .
REPORTS ON PROGRESS IN PHYSICS, 1968, 31 :623-&
[15]   SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS [J].
KOHN, W ;
SHAM, LJ .
PHYSICAL REVIEW, 1965, 140 (4A) :1133-&
[16]   Band structure modulation in MoS2 multilayers and heterostructures through electric field and strain [J].
Lanzillo, Nicholas A. ;
O'Regan, Terrance P. ;
Nayak, Saroj K. .
COMPUTATIONAL MATERIALS SCIENCE, 2016, 112 :377-382
[17]   Strain engineering the work function in monolayer metal dichalcogenides [J].
Lanzillo, Nicholas A. ;
Simbeck, Adam J. ;
Nayak, Saroj K. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (17)
[18]   Pressure-enabled phonon engineering in metals [J].
Lanzillo, Nicholas A. ;
Thomas, Jay B. ;
Watson, Bruce ;
Washington, Morris ;
Nayak, Saroj K. .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2014, 111 (24) :8712-8716
[19]   Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors [J].
Lee, ML ;
Fitzgerald, EA ;
Bulsara, MT ;
Currie, MT ;
Lochtefeld, A .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)
[20]   INTRINSIC PHOTOCONDUCTION AND PHOTOEMISSION IN POLYETHYLENE [J].
LESS, KJ ;
WILSON, EG .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (21) :3110-3121