Band gap engineering in polymers through chemical doping and applied mechanical strain

被引:15
作者
Lanzillo, Nicholas A. [1 ,2 ]
Breneman, Curt M. [1 ,2 ,3 ]
机构
[1] Rensselaer Polytech Inst, Ctr Biotechnol & Interdisciplinary Studies, 110 8th St, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Rensselaer Exploratory Ctr Cheminformat Res, 110 8th St, Troy, NY 12180 USA
[3] Rensselaer Polytech Inst, Dept Chem & Chem Biol, 110 8th St, Troy, NY 12180 USA
关键词
polymer; band gap; strain; DENSITY; SILICON;
D O I
10.1088/0953-8984/28/32/325502
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report simulations based on density functional theory and many-body perturbation theory exploring the band gaps of common crystalline polymers including polyethylene, polypropylene and polystyrene. Our reported band gaps of 8.6 eV for single-chain polyethylene and 9.1 eV for bulk crystalline polyethylene are in excellent agreement with experiment. The effects of chemical doping along the polymer backbone and side-groups are explored, and the use mechanical strain as a means to modify the band gaps of these polymers over a range of several eV while leaving the dielectric constant unchanged is discussed. This work highlights some of the opportunities available to engineer the electronic properties of polymers with wide-reaching implications for polymeric dielectric materials used for capacitive energy storage.
引用
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页数:6
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共 45 条
[1]   Rational Design of Organotin Polyesters [J].
Baldwin, Aaron F. ;
Huan, Tran Doan ;
Ma, Rui ;
Mannodi-Kanakkithodi, Arun ;
Tefferi, Mattewos ;
Katz, Nathan ;
Cao, Yang ;
Ramprasad, Rampi ;
Sotzing, Gregory A. .
MACROMOLECULES, 2015, 48 (08) :2422-2428
[2]   Tetracene thin film transistors with polymer gate dielectrics [J].
Bertolazzi, Simone ;
Wuensche, Julia ;
Cicoira, Fabio ;
Santato, Clara .
APPLIED PHYSICS LETTERS, 2011, 99 (01)
[3]   A dielectric polymer with high electric energy density and fast discharge speed [J].
Chu, Baojin ;
Zhou, Xin ;
Ren, Kailiang ;
Neese, Bret ;
Lin, Minren ;
Wang, Qing ;
Bauer, F. ;
Zhang, Q. M. .
SCIENCE, 2006, 313 (5785) :334-336
[4]   Bandgap Engineering of Strained Monolayer and Bilayer MoS2 [J].
Conley, Hiram J. ;
Wang, Bin ;
Ziegler, Jed I. ;
Haglund, Richard F., Jr. ;
Pantelides, Sokrates T. ;
Bolotin, Kirill I. .
NANO LETTERS, 2013, 13 (08) :3626-3630
[6]   First-principles computation of material properties: the ABINIT software project [J].
Gonze, X ;
Beuken, JM ;
Caracas, R ;
Detraux, F ;
Fuchs, M ;
Rignanese, GM ;
Sindic, L ;
Verstraete, M ;
Zerah, G ;
Jollet, F ;
Torrent, M ;
Roy, A ;
Mikami, M ;
Ghosez, P ;
Raty, JY ;
Allan, DC .
COMPUTATIONAL MATERIALS SCIENCE, 2002, 25 (03) :478-492
[7]   Nature of the band gap of silicon and germanium nanowires [J].
Harris, Clive ;
O'Reilly, E. P. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2) :341-345
[8]   NEW METHOD FOR CALCULATING 1-PARTICLE GREENS FUNCTION WITH APPLICATION TO ELECTRON-GAS PROBLEM [J].
HEDIN, L .
PHYSICAL REVIEW, 1965, 139 (3A) :A796-+
[9]  
Ho J., 2009, Characterization of High Temperature Polymer Thin Films for Power Conditioning Capacitors
[10]   INHOMOGENEOUS ELECTRON-GAS [J].
RAJAGOPAL, AK ;
CALLAWAY, J .
PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919