Novel self-assembled phosphonic acids monolayers applied in N-channel perylene diimide (PDI) organic field effect transistors

被引：16

作者：

Cheng, Heng ^{[1
]}

Huai, Jinyue ^{[1
]}

Cao, Li ^{[1
]}

Li, Zhefeng ^{[1
]}

机构：

[1] Chongqing Univ, Sch Chem & Chem Engn, Chongqing 400044, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2016年 / 378卷

关键词：

Thin film transistors; Self-assembled monolayer; Phosphonic acid derivative; Carrier mobility; NATIVE-OXIDE SURFACE; HIGH-MOBILITY; SEMICONDUCTORS; DIELECTRICS;

D O I：

10.1016/j.apsusc.2016.03.228

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Phosphoric acid (PA) self-assembled monolayers (SAMs) have been developed for applications in organic field-effect transistors (OFETs). This efficient interface modification is helpful for semiconductor layer to form crystal thin film during vapor deposition. Results show that the PDI-i8C based OFETs with PA SAMs exhibit field-effect mobilities up to 0.014 cm(2) V-1 s(-1) (with ODPA as SAMs), which is over 500 times higher than the device without SAMs. Also, transistors with Naph6PA as SAMs show up to 1.5 x 10(-3) cm(2) V-1 s(-1). By studying the morphology of semiconductor layer and SAMs surface, it is found that ODPA bilayer structure plays a key role in inducing PDI-i8C to form orderly crystal thin film. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：545 / 551

页数：7

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