Deterministic and field-free voltage-controlled MRAM for high performance and low power applications

被引：9

作者：

Wu, Y. C. ^{[1
,2
]}

Kim, W. ^{[1
]}

Garello, K. ^{[1
]}

Yasin, F. ^{[1
]}

Jayakumar, G. ^{[1
]}

Couet, S. ^{[1
]}

Carpenter, R. ^{[1
]}

Kundu, S. ^{[1
]}

Rao, S. ^{[1
]}

Crotti, D. ^{[1
]}

Van Houdt, J. ^{[1
,2
]}

Groeseneken, G. ^{[1
,2
]}

Kar, G. S. ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

[2] KULeuven, ESAT, B-3001 Leuven, Belgium

来源：

2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY | 2020年

关键词：

D O I：

10.1109/vlsitechnology18217.2020.9265057

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We propose a deterministic VCMA writing concept that allows exclusion of the pre-read which is required in conventional VCMA write scheme. We apply it on 400 degrees C compatible pMTJ devices with high TMR 246% and retention Delta = 54 and demonstrate a genuine ns-scale write speed. Furthermore, we realize reliable 1.1GHz external field-free VCMA switching with 20fJ write energy by integrating a magnetic hard mask as the in-plane magnetic field generator. An endurance of more than 10(10) cycles is achieved. Our results address the fundamental write operation challenges of the voltage-controlled MRAM technologies.

引用

页数：2

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