Bulk growth of mono- to few-layer graphene on nickel particles by chemical vapor deposition from methane

被引：109
作者：
Chen, Zongping [1 ]
Ren, Wencai [1 ]
Liu, Bilu [1 ]
Gao, Libo [1 ]
Pei, Songfeng [1 ]
Wu, Zhong-Shuai [1 ]
Zhao, Jinping [1 ]
Cheng, Hui-Ming [1 ]
机构：
[1] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
来源：
CARBON | 2010年 / 48卷 / 12期
基金：
美国国家科学基金会;
关键词：
WALLED CARBON NANOTUBES; RAMAN-SCATTERING; LARGE-AREA; EPITAXIAL GRAPHENE; HIGH-QUALITY; LARGE-SCALE; GRAPHITE; PHASE; FILMS; GAS;
D O I：
10.1016/j.carbon.2010.05.052
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A method for the bulk growth of mono- to few-layer graphene on nickel particles by chemical vapor deposition from methane at atmospheric pressure is described. A graphene yield of about 2.5% of the weight of nickel particles used was achieved in a growth time of 5 mm. Scanning and transmission electron microscopy, Raman spectroscopy, thermogravimetry, and electrical conductivity measurements reveal the high quality of the graphene obtained. Suspended graphene can be prepared during this process, bridging the gaps between nearby nickel grains. After the growth of graphene the nickel particles can be effectively removed by a modest FeCl3/HCl etching treatment without degradation of the quality of the graphene sheets. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：3543 / 3550
页数：8
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