Ambipolar organic field-effect transistors based on a low band gap semiconductor with balanced hole and electron mobilities

被引:118
作者
Chikamatsu, Masayuki
Mikami, Takefumi
Chisaka, Jiro
Yoshida, Yuji
Azumi, Reiko
Yase, Kiyoshi
Shimizu, Akihiro
Kubo, Takashi
Morita, Yasushi
Nakasuji, Kazuhiro
机构
[1] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan
[2] Osaka Univ, Grad Sch Sci, Dept Chem, Toyonaka, Osaka 5600043, Japan
关键词
D O I
10.1063/1.2766696
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors have demonstrated the thin-film properties and the ambipolar transport of a delocalized singlet biradical hydrocarbon with two phenalenyl radical moieties (Ph-2-IDPL). The organic field-effect transistors (OFETs) based on Ph-2-IDPL exhibit ambipolar transport with balanced hole and electron mobilities in the order of 10(-3) cm(2)/V s. The Ph-2-IDPL film is an organic semiconductor with a low band gap of 0.8 eV and has small injection barriers from gold electrodes to both the highest occupied molecular orbital and the lowest unoccupied molecular orbital. A complementary metal-oxide-semiconductor-like inverter using two identical Ph-2-IDPL based ambipolar OFETs shows a sharp inversion of the input voltage with high gain. (C) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 50 条
[21]   Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities [J].
Liang, Ling Yan ;
Cao, Hong Tao ;
Chen, Xiao Bo ;
Liu, Zhi Min ;
Zhuge, Fei ;
Luo, Hao ;
Li, Jun ;
Lu, Yi Cheng ;
Lu, Wei .
APPLIED PHYSICS LETTERS, 2012, 100 (26)
[22]   Controlling Electron and Hole Charge Injection in Ambipolar Organic Field-Effect Transistors by Self-Assembled Monolayers [J].
Cheng, Xiaoyang ;
Noh, Yong-Young ;
Wang, Jianpu ;
Tello, Marta ;
Frisch, Johannes ;
Blum, Ralf-Peter ;
Vollmer, Antje ;
Rabe, Juergen P. ;
Koch, Norbert ;
Sirringhaus, Henning .
ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (15) :2407-2415
[23]   Device modeling of light-emitting ambipolar organic semiconductor field-effect transistors [J].
Smith, D. L. ;
Ruden, P. P. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (08)
[24]   Operation and properties of ambipolar organic field-effect transistors [J].
Paasch, G. (cro@zurich.ibm.com), 1600, American Institute of Physics Inc. (98)
[25]   Photovoltaic effects on the organic ambipolar field-effect transistors [J].
Cho, Shinuk ;
Yuen, Jonathan ;
Kim, Jin Young ;
Lee, Kwanghee ;
Heeger, Alan J. .
APPLIED PHYSICS LETTERS, 2007, 90 (06)
[26]   Ambipolar charge transport in organic field-effect transistors [J].
Smits, Edsger C. P. ;
Anthopoulos, Thomas D. ;
Setayesh, Sepas ;
van Veenendaal, Erik ;
Coehoorn, Reinder ;
Blom, Paul W. M. ;
de Boer, Bert ;
de Leeuw, Dago M. .
PHYSICAL REVIEW B, 2006, 73 (20)
[27]   Ambipolar organic field-effect transistors based on rubrene single crystals [J].
Takahashi, T ;
Takenobu, T ;
Takeya, J ;
Iwasa, Y .
APPLIED PHYSICS LETTERS, 2006, 88 (03) :1-3
[28]   Operation and properties of ambipolar organic field-effect transistors [J].
Paasch, G ;
Lindner, T ;
Rost-Bietsch, C ;
Karg, S ;
Riess, W ;
Scheinert, S .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (08)
[29]   Ambipolar organic field-effect transistors on unconventional substrates [J].
P. Cosseddu ;
G. Mattana ;
E. Orgiu ;
A. Bonfiglio .
Applied Physics A, 2009, 95 :49-54
[30]   Ambipolar organic field-effect transistors on unconventional substrates [J].
Cosseddu, P. ;
Mattana, G. ;
Orgiu, E. ;
Bonfiglio, A. .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 95 (01) :49-54