field emitter;
nitride;
doping;
phosphor;
electron affinity;
D O I:
10.1016/S0022-0248(00)00814-9
中图分类号:
O7 [晶体学];
学科分类号:
0702 ;
070205 ;
0703 ;
080501 ;
摘要:
Electron field emission (FE) from high-quality AIN grown by metalorganic vapor-phase epitaxy is studied. The full-widths at half-maximum of the X-ray rocking curve of undoped and heavily Si-doped (Si density: 2.5 x 10(20) cm(-3)) high-quality AIN were as low as 91 and 94 arcsec, respectively. The heavily Si-doped AlN showed a maximum FE current of 347 muA and its density was 11 mA/cm(2) Field emission enhancement as a result of Si doping can be explained by hopping conduction through a Si impurity level. White, red, green, blue light emission (luminance: about 1200 cd/m(2)) from phosphors excited by the field-emitted electrons was observed. (C) 2000 Elsevier Science B.V. All rights reserved.