Large electron field emission from high-quality heavily Si-doped AlN grown by MOVPE

被引:13
作者
Kasu, M [1 ]
Kobayashi, N [1 ]
机构
[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词
field emitter; nitride; doping; phosphor; electron affinity;
D O I
10.1016/S0022-0248(00)00814-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Electron field emission (FE) from high-quality AIN grown by metalorganic vapor-phase epitaxy is studied. The full-widths at half-maximum of the X-ray rocking curve of undoped and heavily Si-doped (Si density: 2.5 x 10(20) cm(-3)) high-quality AIN were as low as 91 and 94 arcsec, respectively. The heavily Si-doped AlN showed a maximum FE current of 347 muA and its density was 11 mA/cm(2) Field emission enhancement as a result of Si doping can be explained by hopping conduction through a Si impurity level. White, red, green, blue light emission (luminance: about 1200 cd/m(2)) from phosphors excited by the field-emitted electrons was observed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:739 / 742
页数:4
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