The Piezoresistive Effect in Top-Down Fabricated p-Type 3C-SiC Nanowires

被引：41

作者：

Hoang-Phuong Phan ^{[1
]}

Dinh, Toan ^{[1
]}

Kozeki, Takahiro ^{[2
]}

Nguyen, Tuan-Khoa ^{[1
]}

Qamar, Afzaal ^{[1
]}

Namazu, Takahiro ^{[3
]}

Nam-Trung Nguyen ^{[1
]}

Dzung Viet Dao ^{[1
]}

机构：

[1] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan, Qld 4111, Australia

[2] Univ Hyogo, Dept Mech Engn, Himeji, Hyogo 6712280, Japan

[3] Aichi Inst Technol, Dept Mech Engn, Toyota 4700392, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 08期

基金：

澳大利亚研究理事会;

关键词：

Silicon carbide; piezoresistive effect; nanowires; NEMS sensors; focused ion beam; SILICON; SENSOR; ORIENTATION; DEPENDENCE; SYSTEMS;

D O I：

10.1109/LED.2016.2579020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports on the piezoresistive effect of top-down fabricated 3C-SiC nanowires (NWs). Focused ion beam was utilized to create p-type 3C-SiC NWs from a 3C-SiC thin film with a carrier concentration of 5x10(18) cm(-3) epitaxially grown on a Si substrate. The as-fabricated NWs were then subjected to tensile strains varying from 0 to 280 mu epsilon. Experimental data showed that the p-type 3C-SiC NWs possess a large gauge factor of 35, which is at least one order of magnitude larger than that of other hard materials, such as carbon nanotubes and graphene. This large gauge factor and the linear relationship between the relative resistance change and the applied strain in the SiC NWs indicate their potential for nanoelectromechanical systems sensing applications.

引用

页码：1029 / 1032

页数：4

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