Structural and electrical properties of (1-x)Bi(Ga1/4Sc3/4)O3-xPbTiO3 piezoelectric ceramics

被引：63

作者：

Cheng, J ^{[1
]}

Eitel, R ^{[1
]}

Li, N ^{[1
]}

Cross, LE ^{[1
]}

机构：

[1] Penn State Univ, Inst Mat Res, University Pk, PA 16802 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 01期

关键词：

D O I：

10.1063/1.1579543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bismuth containing crystalline solutions (1-x)Bi(Ga1/4Sc3/4)O-3-xPbTiO(3) (BGS-PT) have been developed using conventional ceramic technology. X-ray diffraction analysis reveals that BGS-PT has a perovskite structure, in which tetragonal to rhombohedral phase transformation appears for x=0.6. The dielectric properties were investigated at room and elevated temperatures, respectively, for different PT contents. BGS-PT for x=0.6 shows enhancement in dielectric constant K and piezoelectric constant d(33) of 1180 and 124 pC/N, respectively, for the compositions investigated. The Curie temperature (T-c) of BGS-PT is in the range of 465-510 degreesC at least 100 degreesC higher than that of conventional Pb(Zr,Ti)O-3 piezoelectric ceramics. The coercive field (E-c) of BGS-PT strongly depends on the PT content and can reach 75 kV/cm for x=0.8. Our results show that BGS-PT is a good low-lead high-temperature piezoelectric ceramic. (C) 2003 American Institute of Physics.

引用

页码：605 / 609

页数：5

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