Mechanisms of B deactivation control by F co-implantation

被引：69
作者：
Cowern, NEB [1 ]
Colombeau, B
Benson, J
Smith, AJ
Lerch, W
Paul, S
Graf, T
Cristiano, F
Hebras, X
Bolze, D
机构：
[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
[2] Mattson Thermal Prod GmbH, D-89160 Dornstadt, Germany
[3] CNRS, LAAS, F-31077 Toulouse, France
[4] IHP, D-15236 Frankfurt, Oder, Germany
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 10期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.1870131
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermal annealing after preamorphization and solid-phase epitaxy of ultrashallow B implants leads to deactivation and diffusion driven by interstitials released from end-of-range defects. F inhibits these processes by forming small clusters that trap interstitials. A competing B-F interaction causes deactivation when F and B profiles overlap. Both pathways suppress B transient enhanced diffusion. (c) 2005 American Institute of Physics.
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收藏
页码：1 / 3
页数：3
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