MEMS temperature characterization by CdSe quantum dots

被引:0
|
作者
Lit, Sha [1 ]
Zhang, Kai [2 ]
Yang, Jui-Ming [1 ]
Lin, Liwei [1 ]
Yang, Haw [2 ]
机构
[1] Univ Calif Berkeley, Dept Mech Engn, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
关键词
CdSe quantum dots; temperature characterization; MEMS heater;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Non-contact temperature measurements of MEMS structures using CdSe quantum dots (QDs) have been successfully demonstrated for a 1-mm long, 40-mu m wide aluminum micro heater. Quantum dot emission wavelength shifts as a function of temperature was for the first time characterized at the single particle level to be 0.24 nm/degrees C in the 25-65 degrees C range. Temperature profiles of a MEMS heater under different input powers were evaluated based on the spectral shift of bulk quantum dots on the heater and were compared with a one-dimensional electrothermal model. Both experiments and simulations are consistent with variations of less than 0.8 degrees C. The theoretical spatial resolution of this technique can go down to the size of a single quantum dot for non-contact temperature characterizations of micro/nano structures including biological samples.
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页数:2
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