DFT;
few-layer graphene quantum dots;
heavy metals;
interaction;
absorption spectroscopy;
DOS;
CHARGE-TRANSFER;
SELECTIVE DETECTION;
ELECTRONIC-PROPERTIES;
FLUORESCENCE PROBE;
ELEMENTAL MERCURY;
FACILE SYNTHESIS;
GREEN SYNTHESIS;
PHOTOLUMINESCENCE;
CYSTEINE;
ELECTROCHEMILUMINESCENCE;
D O I:
10.3390/ma11071217
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Monolayer, bilayer, and trilayer graphene quantum dots (GQDs) with different binding abilities to elemental heavy metals (HMs: Cd, Hg, and Pb) were designed, and their electronic and optical properties were investigated theoretically to understand deeply the optical response under heavy metal exposure. To gain insight into the nature of interband absorption, we performed density functional theory (DFT) and time-dependent density functional theory (TD-DFT) calculations for thickness-varying GQDs. We found that the interband absorption in GQDs can be efficiently tuned by controlling the thickness of GQDs to attain the desirable coloration of the interacting complex. We also show that the strength of the interaction between GQDs and Cd, Hg, and Pb is strongly dependent on the number of sp(2)-bonded layers. The results suggest that the thickness of GQDs plays an important role in governing the hybridization between locally-excited (LE) and charge-transfer (CT) states of the GQDs. Based on the partial density-of-states (DOS) analysis and in-depth knowledge of excited states, the mechanisms underlying the interband absorption are discussed. This study suggests that GQDs would show an improved sensing performance in the selective colorimetric detection of lead by the thickness control.
机构:
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’eva 13, NovosibirskRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’eva 13, Novosibirsk
Nebogatikova N.A.
Antonova I.V.
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机构:
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’eva 13, NovosibirskRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’eva 13, Novosibirsk
Antonova I.V.
Komonov A.I.
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机构:
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’eva 13, NovosibirskRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’eva 13, Novosibirsk
Komonov A.I.
Prinz V.Y.
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机构:
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’eva 13, NovosibirskRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’eva 13, Novosibirsk
机构:
Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
Columbia Univ, Dept Phys, New York, NY 10027 USADelft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
Barreiro, Amelia
van der Zant, Herre S. J.
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Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, NetherlandsDelft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
van der Zant, Herre S. J.
Vandersypen, Lieven M. K.
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Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, NetherlandsDelft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands