Silicon High-Order Coupled-Microring-Based Electro-Optical Switches for On-Chip Optical Interconnects

被引：74

作者：

Luo, Xianshu ^{[1
]}

Song, Junfeng ^{[1
,2
]}

Feng, Shaoqi ^{[3
]}

Poon, Andrew W. ^{[3
]}

Liow, Tsung-Yang ^{[1
]}

Yu, Mingbin ^{[1
]}

Lo, Guo-Qiang ^{[1
]}

Kwong, Dim-Lee ^{[1
]}

机构：

[1] Agcy Sci Technol & Res, Inst Microelect, Singapore 117685, Singapore

[2] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China

[3] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Photon Device Lab, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 10期

关键词：

Coupled resonators; electrooptic devices; integrated optoelectronics; ring resonator; silicon-on-insulator technology; NETWORKS;

D O I：

10.1109/LPT.2012.2188829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate an electro-optically (EO) tunable switch using tenth-order coupled-microring resonators in siliconon-insulator using complementary metal-oxide-semiconductor fabrication technology. The measured drop-port transmission spectra show box-like transmission passband with similar to 100-GHz bandwidth and similar to 50-dB extinction ratio. With a DC voltage supply to the integrated p-i-n diodes surrounding the microrings, the optical switch shows, respectively, similar to 10 and similar to 45-dB on/off ratios from throughput-and drop-port. The measured EO switching times are similar to 1 ns upon a 1.2-Vpp low-speed driving signal and a DC power consumption of similar to 37 mW. Up to 30-Gb/s pseudorandom binary sequence (2(31) -1) signal transmissions suggest high-data-rate signal switching capability.

引用

页码：821 / 823

页数：3

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