Optical properties of photo-electrochemical etching of anisotropic silicon (110)

被引：5

作者：

Amirhoseiny, Maryam ^{[1
]}

Hassan, Zainuriah ^{[1
]}

ShaShiong, Ng ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia

来源：

IEICE ELECTRONICS EXPRESS | 2012年 / 9卷 / 08期

关键词：

porous silicon (110); electrochemical etching; low-symmetry surface; photoluminescence; Raman spectroscopy; POROUS SILICON; P-TYPE; PHOTOLUMINESCENCE; LAYERS; SI;

D O I：

10.1587/elex.9.752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photo-electrochemical etched Si layers were prepared on n-type (110) oriented silicon wafer. SEM results shows groove structure for etched Si (110). The photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopy of etched Si (110) as a function of etching time was studied. All samples showed a PL peak in the visible spectral and the intensity of the PL peak increases with rising of the etching time. It is also found that the Raman peak of the etched Si samples is red shifted and its intensity significantly decreases as the etching time increases.

引用

页码：752 / 757

页数：6

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