Low-temperature growth of highly c-oriented InN films on glass substrates with ECR-PEMOCVD

被引：8
作者：
Zhi, An-Bo [1 ,2 ]
Qin, Fu-Wen [1 ,2 ]
Zhang, Dong [1 ,2 ]
Bian, Ji-ming [1 ]
Yu, Bo [1 ,2 ]
Zhou, Zhi-Feng [1 ,2 ]
Jiang, Xin [2 ,3 ]
机构：
[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China
[2] Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Elect Beams, Minist Educ, Dalian 116024, Peoples R China
[3] Univ Siegen, Inst Mat Engn, D-57076 Siegen, Germany
来源：
VACUUM | 2012年 / 86卷 / 08期
关键词：
Low temperature; InN; Glass substrates; ECR-PEMOCVD; ZINC-OXIDE-FILMS; MOLECULAR-BEAM EPITAXY; LIGHT-EMITTING DEVICES; BUFFER LAYERS; TRANSPARENT; INDIUM; MOCVD; MBE;
D O I：
10.1016/j.vacuum.2011.10.010
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High quality InN films are deposited with an interlayer of high c-orientation (002) AZO (Aluminium-doped Zinc Oxide; ZnO:Al) films on glass substrates by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) at low temperature. AZO films used as a buffer layer are effective for the epitaxial growth of InN films. The influence of Trimethyl Indium (TMIn) flux on the properties of InN films is systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), atomic force microscopy (AFM) and optical transmittance spectra. The results indicate that high quality InN films with high c-orientation and small surface roughness are successfully achieved at an optimized Trimethyl Indium (TMIn) flux of 5.5 sccm. The InN/AZO structures have great potential for the development of full spectra solar cells. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1102 / 1106
页数：5
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