The Effects of Gamma Irradiation on GaAs HBT

被引：0

作者：

Yang Shi ^{[1
]}

Lu Hong-Liang ^{[1
]}

Zhang Yu-Ming ^{[1
]}

Zhang Yi-Men ^{[1
]}

Zhang Jin-Can ^{[1
]}

Zhang Hai-Peng ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2011年

关键词：

gamma irradiation; radiation effects; GaAs HBT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of gamma irradiation on Gallium-Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) is reported. DC and Radio Frequency (RF) performance are investigated for gamma doses up to 7 Mrad(Si). After 7Mrad(Si) gamma irradiation, an increase of base current (I-b) is observed, the change is thought to be mainly due to the reduction of the effective minority carrier lifetime (tau) in the n-type emitter. Besides, the cutoff frequency (fT) decreases, which is caused by the decrease of the electron mobility (mu(n)) in the base and the collector-base space charge region.

引用

页数：2

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