Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes

被引：31

作者：

Chen, Yaojiang ^{[1
]}

Zhao, Xuyi ^{[2
]}

Huang, Jian ^{[1
]}

Deng, Zhuo ^{[1
]}

Cao, Chunfang ^{[2
]}

Gong, Qian ^{[2
]}

Chen, Baile ^{[1
]}

机构：

[1] Shanghai Tech Univ, Sch Informat Sci & Technol, Optoelect Device Lab, Shanghai 201210, Peoples R China

[2] Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

OPTICS EXPRESS | 2018年 / 26卷 / 26期

关键词：

Antimony compounds - Bandwidth - Dynamic models - Photodiodes - III-V semiconductors - Semiconductor quantum wells - Indium phosphide - Semiconducting indium - Semiconducting indium phosphide;

D O I：

10.1364/OE.26.035034

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work, we demonstrated a normal incident PIN InGaAs/GaAsSb type-II multiple quantum wells (MQW) photodiode on InP substrate for 2 mu m wavelength high-speed operation. The photodiode has a responsivity of 0.35 A/W at mom temperature at 2 mu m, and a 3 dB bandwidth of 3.7 GHz. A carrier dynamic model is developed to study the bandwidth of the multiple quantum wells photodiode. Simulation results match the experimental data well, and analysis shows that hole transport limits the 3 dB bandwidth performance. By optimizing the MQW design, higher bandwidth performance (>10 GHz) can be achieved. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：35034 / 35045

页数：12

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