Experimental evidence for a spin-polarized ground state in the ν=5/2 fractional quantum Hall effect

被引：40

作者：

Pan, W ^{[1
]}

Stormer, HL

Tsui, DC

Pfeiffer, LN

Baldwin, KW

West, KW

机构：

[1] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[3] Columbia Univ, Dept Phys, New York, NY 10027 USA

[4] Columbia Univ, Dept Appl Phys, New York, NY 10027 USA

[5] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 119卷 / 12期

基金：

美国国家科学基金会;

关键词：

two-dimensional electron system; field-effect transistor; quantum Hall effect;

D O I：

10.1016/S0038-1098(01)00311-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the v = 5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n = 0-7.6 X 10(11) Cm-2 with a peak mobility mu = 5.5 X 10(6) cm(2) Vs(-1). The v = 5/2 state shows a strong minimum in diagonal resistance and a developing Hall plateau at magnetic fields (B) as high as 12.6 T. The strength of the energy gap varies smoothly with B-field. We interpret these observations as strong evidence for a spin-polarized ground state at v = 5/2. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：641 / 645

页数：5

共 37 条

[1] K-matrices for non-Abelian quantum Hall states [J].