Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory

被引：23

作者：

Cui, Ajuan ^{[1
]}

Liu, Zhe ^{[2
]}

Dong, Huanli ^{[1
]}

Yang, Fangxu ^{[1
]}

Zhen, Yonggang ^{[1
]}

Li, Wuxia ^{[2
]}

Li, Junjie ^{[2
]}

Gu, Changzhi ^{[2
]}

Zhang, Xiaotao ^{[3
,4
]}

Li, Rongjin ^{[3
,4
]}

Hu, Wenping ^{[1
,3
,4
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China

[3] Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Sch Sci, Tianjin 300072, Peoples R China

[4] Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 37期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

nanofabrication; nanogap electrodes; nonvolatile resistive switches; TRANSPORT JUNCTIONS; FABRICATION; LITHOGRAPHY; SINGLE; GAPS; NM; BEAM; SEPARATION; ARRAYS;

D O I：

10.1002/adma.201603124

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive-switching behavior is identified in the nanogap electrodes, showing stable, robust performance and multibit storage ability, demonstrating great potential in ultrahigh-density storage. The formation and dissolution of Si conductive filaments and the migration of Au atoms is the mechanism behind the resistive switching.

引用

收藏

页码：8227 / 8233

页数：7

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